A -32dBm Sensitivity RF Power Harvester in 130nm CMOS
نویسندگان
چکیده
This paper discusses a RF power harvester optimized for sensitivity and therefore wireless range, for applications requiring intermittent communication. The RF power harvester produces a 1V output at -32dBm sensitivity and 915MHz. This is achieved using a CMOS rectifier operating in the subthreshold region and an off-chip impedance matching network for boosting the received voltage. Equations predicting the rectifier performance are presented and verified through measurements of multiple rectifiers using different transistors in a 130nm CMOS process. Index Terms — Energy harvesting, Rectifiers, RFID, Sensitivity, Voltage boosting.
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